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Lei ShanRSMIBM Corporation, T J Watson Research Center

Lei Shan received his MS degrees in EE & ME in 1998 and PhD degree in 2000 from Georgia Institute of Technology. In 2001, he joined IBM T.J. Watson Research Center, as a Research Staff Member, where he works on high speed electronics/optoelectronics sub-system designs, multi-physics modeling, and system characterization/qualifications. He designed and demonstrated high speed packaging modules for 50Gbps multiplexer and demultiplexer based on IBM SiGe BiCMOS technology. Thereafter, he has been involved in the management of numerous government and industrial projects, including 10G Ethernet, Terabus (48x20Gbps) optical links, 25Gbps aggregated electrical links, and 60GHz/94GHz mmWave applications. His recent research interest focuses on massive data transmission technologies for exascale computing and communication systems, particularly precision designs, ultra-low loss dielectric in hybrid laminations, cost-effective organic substrate technologies for SiP/SoP, embedded capacitor/capacitance in organic substrates, and PCIe Gen5 development for >25Gbps per channel bandwidth. Dr. Shan has authored over 60 publications with three Best Paper Awards.